Spatially resolved Raman spectroscopy evaluation of residual stresses in 3C-SiC layer deposited on Si substrates with different crystallographic orientations

Raman scattering studies were performed on hot-wall chemical vapor deposited (heteroepitaxial) silicon carbide (SiC) films grown on Si substrates with orientations of (1 0 0), (1 1 1), (1 1 0) and (2 1 1), respectively. Raman spectra suggested that good quality cubic SiC single crystals could be obtained on the Si substrate, independent of its crystallographic orientation. Average residual stresses in the epitaxially grown 3C-SiC films were measured with the laser waist focused on the epilayer surface. Tensile and compressive residual stresses were found to be stored within the SiC film and in the Si substrate, respectively. The residual stress exhibited a marked dependence on the orientation of the substrate. The measured stresses were comparable to the thermal stress deduced from elastic deformation theory, which demonstrates that the large lattice mismatch between cubic SiC and Si is effectively relieved by initial carbonization. The confocal configuration of the optical probe enabled a stress evaluation along the cross-section of the sample, which showed maximum tensile stress magnitude at the SiC/Si interface from the SiC side, decreasing away from the interface in varied rate for different crystallographic orientations. Defocusing experiments were used to precisely characterize the geometry of the laser probe in 3C-SiC single crystal. Based on this knowledge, a theoretical convolution of the in-depth stress distribution could be obtained, which showed a satisfactory agreement with stress values obtained by experiments performed on the 3C-SiC surface.     

脉冲压缩光栅光路调节新方法研究

介绍了一种简单而实用的大口径脉冲压缩光栅光路调节方法,有效解决了普通光路调节方法中轴向调节精度不高的问题。首先由全息透镜(光栅)成像公式出发,推导出了该光路调节的基本原理。并从光栅记录系统与光栅衍射波像差的关系,结合初级像差理论推导得出叠栅条纹像差为0.4786λ,大约是光栅衍射波像差(0.25λ)的两倍,利用此关系也可对光栅衍射波像差进行实时监测。从数值模拟结果可知,利用叠栅条纹法调节光路可将光栅波像差减至0.06λ,相应的轴向误差量为0.007 mm,可有效提高了轴向调节精度。     

利用光反射精确测量亚共析碳钢的含碳量

本文从光学角度出发提出了一种经济实用、精度高的测量亚共析碳钢中碳的含量的新方法。阐述了该方法的测量原理，即以金相试样表面对光的反射程度来判定其含碳量，并给出了有关经验公式及数据处理方法。     

Effect of end groups on complexation kinetics between cyclodextrins and guest polymers

α‐Cyclodextrin (α‐CD) has been complexed with various poly(ethylene glycol) (PEG) derivatives in aqueous solution. It has been found that the end groups of PEG derivatives affect the complexation kinetics greatly, but have only a little influence on the thermodynamic behavior. By increasing the hydrophobicity of end groups, the complexation speeds up rapidly. On the other hand, the bulky end groups slow down the threading of polymeric guests into the cavity of CD. By changing the hydrophobicity and the size of end groups, the complexation rate can be adjusted in the range of several orders of magnitudes, which should be quite useful in the design of new supramolecular systems. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 2050–2057, 2006     

类氢类氦类锂镁离子双电子复合的旁观电子角动量研究

类氢类氦类锂镁离子经中间双激发态进行的双电子复合过程在研究惯性约束聚变电子温度中占有很重要的地位.用准相对论方法计算了双电子复合经不同Rydberg态跃迁通道的复合速率系数,并给出不同离化度离子的双电子复合速率系数随电子温度的变化规律.显示出离子的相关能对峰值的电子温度有很大影响,当类氢离子跃迁通道的旁观电子角动量为1时双电子复合系数最大,而类锂离子是旁观电子角动量为3时最大. 关键词： 双电子复合 镁离子 角动量     

感性与理性的和谐统一--构建和谐课堂的点滴体会

1感性认识与理性认识的和谐统一 在教育理念不断更新发展的今天，有一个新的课堂环境和课堂教学理念，是每一个教育工作者自身发展的一项重要任务．特别是在高中物理学科的课堂教学中，构建人与自然的和谐统一，就要从身边的自然环境出发，立足于感性认识为本，再升华为理性认识，把二者有机结合起来，才能让学生获得一个情感与理论上的和谐统一，提高学生对物理学科的浓厚兴趣．     

Precise measurement of magnetic moment of short-lived β-emitting nuclei12B ( I π=1+, T 1/2=20.18 ms)

The spin polarized β-emitting nuclei¹²B (I ^π=1⁺,T _1/2=20.18 ms) were produced by the nuclear reaction¹¹B(d, p)¹²B and by the selection technique of the incident deuteron energy and the¹²B recoil angle following the nuclear reaction. The nuclear magnetic moment of the short-lived nuclei¹²B was measured by β-NMR with the β-NMR and β-NQR setup established for the first time in China. The nuclear magnetic moment of¹²B was determined to be μ=0.99993±0.00048 nm org=0.99993±0.00048 after the precise correction of the Knight shift.     

Fe/Si多层膜的层间耦合与界面扩散

对以本征Si及重掺杂ｐ型和ｎ型Si作为中间层的Fe/Si多层膜的层间耦合进行研究，并通过退火，增大Fe，Si之间的扩散，分析界面扩散对层间耦合的影响. 实验结果表明，层状结构良好的制备态的多层膜，Fe，Si之间也存在一定程度的扩散，它是影响层间耦合的 主要因素，远远超过了半导体意义上的重掺杂，使不同种类的Si作为中间层的层间耦合基本 一致.进一步还发现，在一定范围内增大Fe，Si之间的扩散，即使多层膜的层状结构已经有了相当的退化，Fe/Si多层膜的反铁磁耦合强度基本保持不变. 关键词： Fe/Si多层膜 层间耦合 界面扩散     

数字全息中再现像分离问题的研究

详细分析了数字全息的再现像分离条件,指出数字全息和普通全息的再现像分离条件之间的区别,同时也讨论了再现条件对数字全息记录光路的要求,同时给出一种能部分避免再现像重叠的处理方法,并做出相应的实验验证.